ISL9R3060G2【PDF 1/8 页】DIODE STEALTH 600V 30A TO247-2

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ISL9R3060G2,

SL9R3060P2

—

STEALTH? Diode

ISL9R3060G2, ISL9R3060P2

30 A, 600 V, STEALTHTM

Diode

Features

Applications

SMPS

? Hard Switched PFC Boost Diode

? UPS Free Wheeling Diode

? Motor Drive FWD

? SMPS FWD

? Snubber Diode

Device Maximum Ratings

TC= 25°C unless otherwise noted

Symbol

Parameter

Ratings

Unit

VRRM

Peak Repetitive Reverse Voltage

600

VRWM

Working Peak Reverse Voltage

600

DC Blocking Voltage

600

IF(AV)

Average Rectified Forward Current

IFRM

Repetitive Peak Surge Current (20kHz Square Wave)

IFSM

Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)

325

Power Dissipation

200

EAVL

Avalanche Energy (1A, 40mH)

TJ, TSTG

Operating and Storage Temperature Range

-55 to 175 °C

TPKG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s

Package Body for 10s, See Techbrief TB334

300

260

°C

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

CATHODE

(FLANGE)

CATHODE

(BOTTOM SIDE

CATHODE

ANODE

METAL)

Symbol

JEDEC TO-220AC-2L

JEDEC STYLE 2 LEAD

TO-247-2L

ANODE

CATHODE

Package

Stealth Recovery trr

= 36ns (@ IF

= 30 A)

? Max Forward Voltage, VF

= 2.4 V (@ T

= 25°C)

600

V Reverse Voltage and High Reliability

? Avalanche Energy Rated

? RoHS Compliant

The ISL9R3060G2, ISL9R3060P2

a STEALTH? diode optimized

for low loss performance in high frequency hard switched

applications. The STEALTH? family exhibits low reverse recovery

current (Irr) and exceptionally soft recovery

under typical operating

conditions. This device is intended for use as a free wheeling or

boost diode in power supplies and other power switching

applications. The low Irr

and short ta phase reduce loss in switching

transistors. The soft recovery minimizes ringing, expanding the

range of conditions under which the diode may be operated without

the use of additional snubber circuitry. Consider using the

STEALTH? diode with an SMPS IGBT to provide the most efficient

and highest power density design at lower cost.

?2001

Fairchild

Semiconductor Corporation

ISL9R3060G2, ISL9R3060P2

Rev.

www.fairchildsemi.com

Description

November

2013

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